Waveguide attenuator

ABSTRACT

The present disclosure relates to semiconductor structures and, more particularly, to waveguide attenuators and methods of manufacture. The structure includes: a main bus waveguide structure; a first hybrid waveguide structure evanescently coupled to the main bus waveguide structure and comprising a first geometry of material; and a second hybrid waveguide structure evanescently coupled to the main bus waveguide structure and comprising a second geometry of the material.

FIELD OF THE INVENTION

The present disclosure relates to semiconductor structures and, moreparticularly, to waveguide attenuators and methods of manufacture.

BACKGROUND

Semiconductor optical waveguide structures (e.g., photonic components)are an important component of integrated optoelectronic systems. Forexample, a semiconductor optical waveguide structure is capable ofguiding optical waves (e.g., light) with minimal loss of energy byrestricting expansion of the light into the surrounding substrate. Theoptical waveguide structure can be used in many different applicationsincluding, e.g., semiconductor lasers, optical filters, switches,modulators, isolators, and photodetectors. The use of semiconductormaterial also enables monolithic integration into optoelectronic devicesusing known fabrication techniques.

Open or unconnected ports or other termination points of the photonicsdevice can result in leakage or backscatter of the optical signal backinto the chip. This can also cause crosstalk with other photonicdevices, as well as overall interference of the optical signal. Toprevent such issues from occurring, an absorber is coupled to thephotonics device. The absorbers are known to be manufactured from Gematerial as they are easily integrated into the fabrication processes ofthe photonics devices. However, Ge absorbers suffer from relatively highoptical return loss (e.g., back-reflection and backscatter) which, inturn, can significantly impede the optical strength of the signal.Backscattering into lasers can result in instability and additionallaser noise. Additionally, it can lead to degraded high-speed signalintegrity and increased bit-error-rate of communication links.

SUMMARY

In an aspect of the disclosure, a structure comprises: a main buswaveguide structure; a first hybrid waveguide structure evanescentlycoupled to the main bus waveguide structure and comprising a firstgeometry of material; and a second hybrid waveguide structureevanescently coupled to the main bus waveguide structure and comprisinga second geometry of the material.

In an aspect of the disclosure, a structure comprising: a firstwaveguide structure composed of semiconductor material; a secondwaveguide structure composed of the semiconductor material and which ispartially coated with a polarization-independent transparent conductivematerial; and a third waveguide structure composed of the semiconductormaterial and which is partially coated with the polarization-independenttransparent conductive material, differently than the second waveguidestructure.

In an aspect of the disclosure, a structure comprising: a main buswaveguide structure comprising semiconductor material monolithicallyintegrated into semiconductor on insulator (SOI) technology; a firsthybrid waveguide structure comprising the semiconductor materialmonolithically integrated into the SOI technology, the first hybridwaveguide structure further comprising a partial coating of vanadatebased material which has a first geometry which is structured to preventreflection back to the main bus waveguide structure; and a second hybridwaveguide structure comprising the semiconductor material monolithicallyintegrated into the SOI technology, the second hybrid waveguidestructure further comprising a partial coating of vanadate basedmaterial which has a geometry different than the first geometry andwhich is structured to prevent reflection back to the main bus waveguidestructure.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure is described in the detailed description whichfollows, in reference to the noted plurality of drawings by way ofnon-limiting examples of exemplary embodiments of the presentdisclosure.

FIG. 1 shows a perspective view of a three channel waveguide structure,amongst other features, and respective fabrication processes inaccordance with aspects of the present disclosure.

FIG. 2 shows waveguide structures coated with vanadate material, amongstother features, and respective fabrication processes in accordance withaspects of the present disclosure.

FIGS. 3A-3H show the waveguide structures with different vanadatematerial geometries, amongst other features, and respective fabricationprocesses in accordance with additional aspects of the presentdisclosure.

FIG. 4 shows a top view of a three channel waveguide structure withtapers and bends, amongst other features, and respective fabricationprocesses in accordance with additional aspects of the presentdisclosure.

FIGS. 5A-5E show different, illustrative shapes (configurations) ofvanadate material, which can be implemented in any of the differentaspects of the present disclosure as shown in FIGS. 3A-4 .

DETAILED DESCRIPTION

The present disclosure relates to semiconductor structures and, moreparticularly, to waveguide attenuators and methods of manufacture. Morespecifically, the present disclosure provides a three channel waveguidestructure which includes a polarization-independent transparentconductive oxide (e.g., vanadate) material coating the attenuator whichis based on a semiconductor on insulator (SOI) platform. Advantageously,the waveguide attenuators are designed and structured to reduce theoptical return loss of waveguide-integrated absorbers by combining Si orSiN with vanadate (or similar) materials.

In embodiments, the waveguide structures are ultra-compact monolithicstructures composed of vanadate coated (covered) Si structures orvanadate coated SiN structures, as examples. More specifically, inembodiments, the waveguide attenuators comprise a main Si (or SiN) buswaveguide and two hybrid (stacked) Si-vanadate (or SiN) waveguides thatare evanescently coupled to the main bus waveguide. In further examples,the waveguide structures can be based on other material systems, e.g.,III-V, SiON, AN, polymer, etc., coated with vanadate based materials,e.g., CaVO₃, SrVO₃, etc. (or other materials with similar properties) toform integrated monolithic photonic waveguides and components. The useof vanadate material can be used to attenuate both transverse-electric(TE) mode and transverse-magnetic (TM) mode for Si or SiN waveguideswith minimized back reflection. In fact, the use of vanadate materialhas been found to provide improved absorption coefficient (attenuation)for both polarizations, e.g., TE and TM modes. Accordingly, the use ofvanadate material will provide ultra-low optical return loss for both TEand TM input (polarization independent).

In further embodiments, the vanadate coated waveguide structures can beprovided in many different geometries and/or configurations such as,e.g., a taper, hybrid taper with cascaded tapers and/or straightsections. By way of examples, the waveguide structures can include thefollowing configurations: (i) adiabatic tapers in the input region; (ii)adiabatic bends in the input region; (iii) both adiabatic tapers andbends in the input region; (iv) tapered waveguide structures incombination with the above options; and (v) stacked vanadate attenuatorfor reduced TM optical return loss, i.e., back reflection. Moreover, thewaveguide structures described herein can be used for other functionalphotonics components (e.g., bends, couplers, etc.), which can easily beintegrated in a photonics integrated circuit.

The waveguide attenuators of the present disclosure can be manufacturedin a number of ways using a number of different tools. In general,though, the methodologies and tools are used to form structures withdimensions in the micrometer and nanometer scale. The methodologies,i.e., technologies, employed to manufacture the waveguide attenuators ofthe present disclosure have been adopted from integrated circuit (IC)technology. For example, the structures are built on wafers and arerealized in films of material patterned by photolithographic processeson the top of a wafer. In particular, the fabrication of the waveguideattenuators uses three basic building blocks: (i) deposition of thinfilms of material on a substrate, (ii) applying a patterned mask on topof the films by photolithographic imaging, and (iii) etching the filmsselectively to the mask.

FIG. 1 shows a perspective view of a three channel waveguide structure,amongst other features, and respective fabrication processes inaccordance with aspects of the present disclosure. In particular, thestructure 10 shown in FIG. 1 includes a substrate 12 comprisingsemiconductor on insulator (SOI) technologies. For example, in the SOItechnologies, the substrate 12 includes a wafer 12 a, e.g., Si wafer, aninsulator layer 12 a′, and a semiconductor substrate 12 a″. Thesemiconductor substrate 12 a″ is preferably composed of Si material;although other semiconductor materials are also contemplated herein,e.g., III/V or II/VI compound semiconductors, SiON, AN, polymer, etc.Moreover, the semiconductor substrate 12 a″ may comprise any suitablecrystallographic orientation (e.g., a (100), (110), (111), or (001)crystallographic orientation). The insulator layer 12 a′ is providedbetween the Si wafer 12 a and the semiconductor substrate 12 a″. Theinsulator layer 12 a′ may comprise any suitable material, includingsilicon oxide, sapphire, other suitable insulating materials, and/orcombinations thereof. An exemplary insulator layer 12 a′ is a buriedoxide layer (BOX). The insulator layer 12 a′ and the semiconductorsubstrate 12 a″ may be formed by any known fabrication methods, e.g.,SiMOX, such that no further explanation is required for a completeunderstanding of the present disclosure.

Still referring to FIG. 1 , a plurality of photonics components (e.g.,waveguide structures) 14 a, 14 b, 14 c are formed from the semiconductorsubstrate 12 a″. In this way, the plurality of waveguide structures 14a, 14 b, 14 c form a monolithic structure with the substrate 12. Asshould be understood by those of skill in the art, the waveguidestructures 14 b, 14 c will be evanescently coupled to the waveguidestructure 14 a. In embodiments, the waveguide structure 14 a is a mainbus waveguide; whereas, the waveguide structure 14 b will be used toattenuate a TE mode and the waveguide structure 14 c will be used toattenuate a TM mode, independently from one another.

In the implementation shown in FIG. 1 , for example, the waveguidestructures 14 a, 14 b, 14 c are patterned directly from semiconductorsubstrate 12 a″, e.g., Si or other semiconductor material usingconventional CMOS fabrication processes as discussed herein, including athinning of the material. For example, a resist formed over thesemiconductor substrate 12 a″ is exposed to energy (light) to form apattern (opening). An etching process with a selective chemistry, e.g.,reactive ion etching (RIE), will be used to remove semiconductorsubstrate 12 a″ through the openings of the resist. The resist can thenbe removed by a conventional oxygen ashing process or other knownstripants, leaving the waveguide structures 14 a, 14 b, 14 c fullyintegrated with the substrate 12. In the scenario that the waveguidestructures 14 a, 14 b, 14 c comprise SiN compound semiconductors, SiON,AN, polymer, etc., the material can be fully or partially etchedmaterial on an oxide material.

FIG. 2 shows the waveguide structures 14 a, 14 b, 14 c coated with avanadate material, amongst other features. More specifically, thewaveguide structures 14 a, 14 b, 14 c are first coated with an insulatormaterial 16, e.g., oxide. The insulator material 16 can be blanketdeposited over the waveguide structures 14 a, 14 b, 14 c and theinsulator layer 12 a′ by any conventional deposition method includingchemical vapor deposition (CVD) processes. As further described herein,the insulator material 16 can be optimized to different thicknesses onthe waveguide structures 14 b, 14 c.

A polarization-independent transparent conductive oxide material 18 (orother materials with similar material properties) is deposited over theinsulator material 16, followed by a planarization process. Inembodiments, the polarization-independent transparent conductive oxidematerial 18 can be a vanadate based material. For example, the vanadatebased material can be CaVO₃ or SrVO₃, etc. It has been found afterextensive experimentation that vanadate materials (CaVO₃, SrVO₃, etc.)demonstrate good transparent conducting (as with oxides) due to theiropto-electronic properties. Moreover, vanadate materials demonstratestrong guiding properties and strong confinement that is difficult toachieve with existing materials currently integrated into photonicsdevices, e.g., Ge based absorbers.

The material 18 can be deposited using CVD or hybrid molecular beamepitaxy, pulsed laser deposition, pulsed electron evaporation, atomiclayer deposition (ALD), etc. Typical growth temperature is around 350°C. — 500° C. The thickness of the material 18 can be optimized fordifferent applications, e.g., TM mode or TE mode applications. Inembodiments, for example, the thickness of the material 18 can be 2.0λor greater, where λ is the operating wavelength for each differentwaveguide structures 14 b, 14 c. Examples of different geometries aredescribed further with reference to FIGS. 3A-4 . Following thedeposition process, the material 18 can be planarized using a chemicalmechanical polishing (CMP) process known to those of skill in the artsuch that no further explanation is required for a completeunderstanding of the present disclosure.

FIGS. 3A-3H show different patterns (e.g., thicknesses, locations, etc.)of the material 18 on the waveguide structures 14 b, 14 c. In each ofthe embodiments described herein, the material 18 will be removed fromthe main bus waveguide structure 14 a; whereas, the material 18 will bepatterned or deposited into different geometries (e.g., locations,thicknesses, etc.) on the waveguide structures 14 b, 14 c, optimized forthe different transmission modes, e.g., TM mode and TE mode. Thepatterning of the waveguide structures 14 a, 14 b, 14 c and, morespecifically, the material 18 of the waveguide structures 14 a, 14 b, 14c is performed by conventional lithography and etching processes.

For example, a resist formed over the material 18 of the waveguidestructures 14 a, 14 b, 14 c is exposed to energy (light) to form apattern (opening). An etching process with a selective chemistry, e.g.,RIE, will be used to pattern the material 18 on the waveguide structures14 b, 14 c and remove the material 18 from the main bus waveguidestructure 14 a. In embodiments, the etchant can be a dry etch withetchant chemistry of, for example, hot ammonia (NH₃) and/or hydrochloricacid (HCl) vapor. Following resist removal by a conventional oxygenashing process or other known stripants, an interlevel dielectricmaterial 20, e.g., oxide material, can be deposited over the waveguidestructures 14 a, 14 b, 14 c by a CVD process.

As in each of the embodiments described herein, the material 18 ispatterned on the waveguide structure 14 b to optimize the TE modetransmission; whereas, the material 18 is patterned on the waveguidestructure 14 b to optimize the TM mode transmission. For example, FIG.3A shows the material 18 patterned differently on both waveguidestructures 14 b, 14 c. In this example, the material 18 is patternedsuch that the width w1 on the sidewalls of the waveguide structure 14 bcan be from about 0.5λ to 2λ, with a thickness t1 on top of thewaveguide structure 14 b from about 0.02λ to 0.3λ. On the other hand,the width w2 on the sidewalls of the waveguide structure 14 c can befrom about 0.0λ to 0.4λ, with a thickness t1 on top of the waveguidestructure 14 c of about 0.02λ to 0.3λ. The width w3 of the semiconductorsubstrate 12 a″ for each waveguide structure 14 a, 14 b, 14 c can beabout 0.1λ to 2λ and the thickness t3 can be about 0.15λ to 0.3λ.

Moreover, the insulator layer 12 a′ can be about 0.0λ to 0.06λ. As ineach of the embodiments, the insulator material 16 can also be removedfrom surfaces of the waveguide structure 14 a; although having theinsulator material 16 covering the main bus waveguide structure 14 a maysimplify the process, e.g., the oxide overlay for all three buswaveguide structures 14 a, 14 b, 14 c can be formed simultaneously. Itis also noted that the device, e.g., waveguide structures 14 a, 14 b, 14c, is typically covered with oxide cladding or back-of-the-line (BEOL)dielectric cladding (which is typically made of multiple low-indexdielectric materials), either of which can be represented at referencenumeral 20 in FIGS. 3A-3H.

FIG. 3B shows a structure 10 a where the material 18 is removed from atop surface of the waveguide structure 14 b, e.g., removed from theinsulator material 16. In this embodiment, after an initial etchingprocesses to remove the material 18 from the waveguide structure 14 a,an anisotropic etching process can be utilized to remove any unwantedmaterial 18 from the top surface of the waveguide structure 14 b, whileprotecting the material 18 on the waveguide structure 14 c. As should beunderstood by those of skill in the art, the anisotropic etching processwill etch the material 18 on the horizontal surfaces of the waveguidestructure 14 b and over the insulator layer 12 a′. In this way, thematerial 18 will be provided on sidewalls of the waveguide structure 14b.

In FIG. 3C, the structure 10 b includes the material 18 on a top surfaceof the waveguide structure 14 c with a different thickness than on a topsurface of the waveguide structure 14 b. More specifically, in thisembodiment, the material 18 has a first thickness t1′ on the top surfaceof the waveguide structure 14 c and a second thickness t1 on the topsurface of the waveguide structure 14 b, where t1′>t1. In thisembodiment, the thickness t1′, t1 of the material 18 can be optimized ortuned by separate etching or planarization processes as is known in theart such that no further explanation is required for a completeunderstanding of the present disclosure. In optional embodiments, theinsulator material 16 can also be removed from surfaces of the waveguidestructure 14 a.

FIG. 3D shows a structure 10 c which has insulator material 16 with adifferent thickness over the waveguide structures 14 b, 14 c. In thisembodiment, for example, the insulator material 16 has a thickness t3 onthe top surface of the waveguide structure 14 b and a thickness t4 onthe top surface of the waveguide structure 14 c, where t4>t3. In thisembodiment, the thickness t3, t4 of the insulator material 16 can beoptimized or tuned by separate etching or planarization processes as isknown in the art such that no further explanation is required for acomplete understanding of the present disclosure. In optionalembodiments, the insulator material 16 can also be removed from surfacesof the waveguide structure 14 a.

FIG. 3E shows a structure 10 d which has the material 18 removed from atop surface of the waveguide structure 14 b and sidewalls of thewaveguide structure 14 c, e.g., removed from the insulator material 16.In this embodiment, after an initial etching processes to remove thematerial 18 from the waveguide structure 14 a, an anisotropic etchingprocess can be utilized to remove any unwanted material 18 from the topsurface of the waveguide structure 14 c, while protecting the material18 on the waveguide structure 14 b. In addition, the material 18 can bepartially removed from a top surface of the waveguide structure 14 c andfully removed from the sidewalls of the waveguide structure 14 c usingconventional lithography and etching processes as already describedherein. Also, in alternative embodiments, the material 18 can remainfully on a top surface of the waveguide structure 14 c, depending on theoptimized parameters for the waveguide structure 14 c. In optionalembodiments, the insulator material 16 can also be removed from surfacesof the waveguide structure 14 a.

In FIG. 3F, the structure 10 e includes a slotted waveguide structure,e.g., waveguide structures 14 b 1, 14 b 2 formed from the semiconductormaterial 12 a″ (or SiN). The slotted waveguide structures 14 b 1, 14 b 2are separated by the insulator material 16, with the material 18remaining on opposing sidewalls (or a sidewall closest to the main bus14 a) of the slotted waveguide structures 14 b 1, 14 b 2, similar tothat described with respect to FIG. 3E. In embodiments, the insulatormaterial 16 can also be removed from a top surface of the slottedwaveguide structures 14 b 1, 14 b 2. Moreover, in this embodiment, thewaveguide structure 14 c will include the material 18 fully or partiallyon a top surface thereof, similar to that described in FIG. 3E. Thisembodiment aims to better couple and interact the TE mode with buswaveguide structure 14 b 1, 14 b 2, as well as attenuate the TEwaveguide mode more efficiently.

FIG. 3G shows a structure 10 f with a slotted waveguide structure, e.g.,waveguide structures 14 b 1, 14 b 2 formed from the semiconductormaterial 12 a″ (or SiN), in addition to a stacked waveguide structures14 c. As in the embodiment of FIG. 3F, the slotted waveguide structures14 b 1, 14 b 2 are separated by the insulator material 16, with thematerial 18 remaining on opposing sidewalls (or a sidewall closest tothe main bus 14 a) of the slotted waveguide structures 14 b 1, 14 b 2.In embodiment, the insulator material 16 can also be removed from a topsurface of the slotted waveguide structures 14 b 1, 14 b 2. Moreover, inthis embodiment, the waveguide structures 14 c is a stacked structurewith crystallized material 22 underneath the material 18, with the oxidematerial 16 separating the crystallized material 22 from the material 18and the substrate material 12 a″ of the waveguide structures 14 c. Thecrystallized material 22 can be crystalized Si-Poly-Si or Si—SiN, asexamples. This embodiment aims to improve TE mode and TM modeperformance.

FIG. 3H shows a structure 10 g where the waveguide structure 14 b is sstacked waveguide structures 14 c. This embodiment aims to better coupleand interact the TM mode with main bus waveguide 14 a, as well asattenuate the TM waveguide mode more efficiently.

FIG. 4 shows a top view of a three channel waveguide structure 10 hcomprising waveguide structures 14 a, 14 b, 14 c. In this configuration,the main bus waveguide structure 14 a includes a tapered end in theinput region 24. The waveguide structures 14 b, 14 c (each of whichinclude material 18), which are both evanescently coupled to the mainbus waveguide structure 14 a, include tapers and bends or anycombination thereof. More specifically, the waveguide structures 14 b,14 c include adiabatic tapers 26 and adiabatic bends 28 in the inputregion. In embodiments, the bends of the waveguide structures 14 b, 14 care optimized to minimize/eliminate back reflection to the main buswaveguide structure 14 a. In alternative structures, the waveguidestructures 14 b, 14 c can include any combination of adiabatic tapersand bends in the input regions. Moreover, the waveguide structures 14 b,14 c can include any combination of configurations shown in FIGS. 3A-3H.

FIGS. 5A-5E show different, illustrative shapes (configurations) of thematerial 18 on the waveguide structures 14 b, 14 c, which can beimplemented in any of the different aspects of the present disclosure asshown in FIGS. 3A-4 . It should be understood that the different shapes(e.g., geometries) can be used to optimize the performance for either TMor TE modes of transmission. And, as shown in each of these embodiments,the material 18 does not coat the entire length of the waveguidestructures 14 b, 14 c; instead, the material 18 is of such dimensionsand/or geometry that light entering the waveguide structures 14 b, 14 c,as reflected outwards from the main bus waveguide 14 a, will beattenuated to such an extent that it will not reflect back into the mainbus waveguide 14 a.

For example, in FIG. 5A, the material 18 is rectangular (with straightsidewalls). In FIG. 5B, the material 18 is square (with straightsidewalls). In FIG. 5C, the material 18 has tapered sidewalls. In thisembodiment, the taper can have an angle of ø, which ranges from about 0°to 45°; although other dimensions are contemplated herein. In FIG. 5D,the material 18 has a single taper with a straight section. In FIG. 5E,the material 18 has a composite taper, e.g., two different angles of itssidewalls.

Table 1 below shows improved performance of a photonics device, e.g.,waveguide structure, implementing the absorbers shown and described inthe present disclosure. More specifically, Table 1 shows a comparison ofa photonics device, e.g., waveguide structure, implementing thewaveguide absorber shown in FIG. 3A-4 to that of a process of record forboth TE and TM modes.

TABLE 1 POR POR Vanadate Vanadate Absorber Absorber Absorber Absorber(TE) (TM) (TE) (TM) Back Reflection (dB) −18.7 dB −30 dB −56 dB −56 dBInsertion loss/attenuation  −4.7 dB −3.1 dB  −43 dB −45 dB (dB)

The waveguide attenuators can be utilized in system on chip (SoC)technology. It should be understood by those of skill in the art thatSoC is an integrated circuit (also known as a “chip”) that integratesall components of an electronic system on a single chip or substrate. Asthe components are integrated on a single substrate, SoCs consume muchless power and take up much less area than multi-chip designs withequivalent functionality. Because of this, SoCs are becoming thedominant force in the mobile computing (such as in Smartphones) and edgecomputing markets. SoC is also commonly used in embedded systems and theInternet of Things.

The method(s) as described above is used in the fabrication ofintegrated circuit chips. The resulting integrated circuit chips can bedistributed by the fabricator in raw wafer form (that is, as a singlewafer that has multiple unpackaged chips), as a bare die, or in apackaged form. In the latter case the chip is mounted in a single chippackage (such as a plastic carrier, with leads that are affixed to amotherboard or other higher level carrier) or in a multichip package(such as a ceramic carrier that has either or both surfaceinterconnections or buried interconnections). In any case the chip isthen integrated with other chips, discrete circuit elements, and/orother signal processing devices as part of either (a) an intermediateproduct, such as a motherboard, or (b) an end product. The end productcan be any product that includes integrated circuit chips, ranging fromtoys and other low-end applications to advanced computer products havinga display, a keyboard or other input device, and a central processor.

The descriptions of the various embodiments of the present disclosurehave been presented for purposes of illustration, but are not intendedto be exhaustive or limited to the embodiments disclosed. Manymodifications and variations will be apparent to those of ordinary skillin the art without departing from the scope and spirit of the describedembodiments. The terminology used herein was chosen to best explain theprinciples of the embodiments, the practical application or technicalimprovement over technologies found in the marketplace, or to enableothers of ordinary skill in the art to understand the embodimentsdisclosed herein.

What is claimed:
 1. A structure, comprising a hybrid attenuatorcomprising waveguide structures that evanescently couple to a main buswaveguide, wherein each waveguide structure of the hybrid attenuatorhave different geometries and associated materials structured in a waythat results in transverse-electric (TE) mode and transverse-magnetic(TM) mode attenuation.
 2. The structure of claim 1, wherein the materialis a vanadate material which partially coats the first hybrid waveguidestructure and the second hybrid waveguide structure.
 3. The structure ofclaim 2, wherein the waveguide structures comprise: a first hybridwaveguide structure evanescently coupled to the main bus waveguide; anda second hybrid waveguide structure evanescently coupled to the main buswaveguide.
 4. The structure of claim 3, wherein the first hybridwaveguide structure comprises a first geometry that has sidewalls arethicker than sidewalls of a second geometry of the second hybridwaveguide structure.
 5. The structure of claim 3, wherein a geometry ofthe second hybrid waveguide structure includes a top portion on thesecond hybrid waveguide that is thicker than a top portion of a geometryof the first hybrid waveguide structure.
 6. The structure of claim 3,wherein the first hybrid waveguide is devoid of the material on the topportion.
 7. The structure of claim 3, wherein the material is partiallyor fully across a width on a top portion on the second hybrid waveguideand the first hybrid waveguide structure is devoid of the material on atop portion.
 8. The structure of claim 3, wherein the first hybridwaveguide structure is a slotted structure.
 9. The structure of claim 3,further comprising an insulator material under the material of both thefirst hybrid waveguide structure and the second hybrid waveguidestructure, wherein the insulator material is thicker on a top surface ofthe second hybrid waveguide structure than on a top surface of the firsthybrid waveguide structure.
 10. The structure of claim 3, wherein thefirst hybrid waveguide structure and the second hybrid waveguidestructure include adiabatic bends.
 11. The structure of claim 3, whereinthe main bus waveguide structure includes a taper at its input end. 12.The structure of claim 3, wherein the second hybrid waveguide structureis a stacked structure comprising a crystallized semiconductor materialunder the material.
 13. The structure of claim 3, wherein the main buswaveguide structure, the first hybrid waveguide structure and the secondhybrid waveguide structure comprise semiconductor substrate materialmonolithically integrated into semiconductor on insulator (SOI)technologies.
 14. A structure comprising: a first waveguide structurewhich is partially coated with a polarization-independent transparentconductive material; and a second waveguide structure which is partiallycoated with the polarization-independent transparent conductivematerial, differently than the first waveguide structure, wherein thepolarization-independent transparent conductive material has a geometrythat attenuates a transverse-electric (TE) mode of transmission for thefirst waveguide structure and attenuates a transverse-magnetic (TM) modeof transmission for the second waveguide structure.
 15. The structure ofclaim 14, wherein the polarization-independent transparent conductivematerial is a vanadate based material.
 16. The structure of claim 14,further comprising a third first waveguide structure which evanescentlycouples and reflects light to the first waveguide structure and thesecond waveguide structure.
 17. The structure of claim 16, wherein thethird waveguide structure is devoid of the polarization-independenttransparent conductive material.
 18. The structure of claim 16, whereinthe third waveguide structure has a tapered input end and the firstwaveguide structure and the second waveguide structure have adiabaticbends.
 19. A structure, comprising: a first hybrid waveguide structurecomprising semiconductor material monolithically integrated into SOItechnology, the first hybrid waveguide structure further comprising apartial coating of vanadate based material which has a first geometrystructured to prevent reflection back to a main bus waveguide structure;and a second hybrid waveguide structure comprising the semiconductormaterial monolithically integrated into the SOI technology, the secondhybrid waveguide structure further comprising a partial coating ofvanadate based material which has a geometry different than the firstgeometry and which is structured to prevent reflection back to the mainbus waveguide structure.